(PDF) Si9959DY Datasheet - Dual N-Channel Enhancement-Mode MOSFET

Número de pieza	Si9959DY
Descripción	Dual N-Channel Enhancement-Mode MOSFET
Fabricantes	TEMIC
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No Preview Available ! Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.30 @ VGS = 10 V 0.50 @ VGS = 5 V ID (A) "2.0 "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 60 "20 "2.0 "1.6 "8 1.8 2 1.3 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1224. A SPICE Model data sheet is available for this product (FaxBack document #5116). Siliconix S-47958—Rev. G, 15-Apr-96 1 1 page

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PDF Si9959DY Data sheet ( Hoja de datos )