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PDF BUK7513-75B Data sheet ( Hoja de datos )
| Número de pieza | BUK7513-75B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7513-75B
N-channel TrenchMOS standard level FET
Rev. 02 — 25 November 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A; Tj = 25 °C;
on-state resistance see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 75 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 10 V; ID = 25 A; VDS = 60 V;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 75 V
- - 75 A
- - 157 W
- 11.7 13 mΩ
- - 125 mJ
- 15 - nC
1 page  
NXP Semiconductors
BUK7513-75B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 0.95 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
single shot
03nm82
P
tp
δ=
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7513-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 November 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7513-75B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7513-75B v.2
Modifications:
20101125
Product data sheet
-
BUK75_7613-75B v.1
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7513-75B separated from data sheet BUK75_7613-75B v.1.
BUK75_7613-75B v.1 20030414
Product data
-
-
BUK7513-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 November 2010
© NXP B.V. 2010. All rights reserved.
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