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IPZ40N04S5-5R4 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPZ40N04S5-5R4
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPZ40N04S5-5R4 fiche technique
IPZ40N04S5-5R4
OptiMOS-5 Power-Transistor
Product Summary
Features
• OptiMOS- power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
5.4 mW
40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
1
• 100% Avalanche tested
Type
IPZ40N04S5-5R4
Package
PG-TSDSON-8
Marking
5N0454
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=20A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
40
40
160
53
40
±20
48
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-06

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