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PDF PJD14P10A Data sheet ( Hoja de datos )
| Número de pieza | PJD14P10A | |
| Descripción | 100V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<140mΩ
RDS(ON), VGS@-4.5V,ID@-3A<170mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case:TO-252 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current(Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
-100
+20
-14
-9
-40
60
24
-2.5
-2.0
2.0
1.3
20
-55~150
2.1
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 21,2015-REV.00
Page 1
1 page  
PPJD14P10A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
July 21,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJD14P10A.PDF ] | |
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