DataSheet.es    


Datasheet PJD16N08A-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


PJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJD06N03N-Channel Enhancement Mode MOSFET

PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and
Pan Jit International
Pan Jit International		mosfet
2PJD09N03N-Channel Enhancement Mode MOSFET

PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and
Pan Jit International
Pan Jit International		mosfet
3PJD10P10A100V P-Channel Enhancement Mode MOSFET

PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features  RDS(ON), VGS@-10V,ID@-5A<210mΩ  RDS(ON), [email protected],ID@-3A<230mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compli
Pan Jit International
Pan Jit International		mosfet
4PJD14P06-AU60V P-Channel Enhancement Mode MOSFET

PPJD14P06-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-7A<115mΩ  RDS(ON), [email protected],[email protected]<160mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Acqire quality s
Pan Jit International
Pan Jit International		mosfet
5PJD14P06A60V P-Channel Enhancement Mode MOSFET

PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), [email protected],ID@-3A<130mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead fr
Pan Jit International
Pan Jit International		mosfet
6PJD14P10A100V P-Channel Enhancement Mode MOSFET

PPJD14P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-7A<140mΩ  RDS(ON), [email protected],ID@-3A<170mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compli
Pan Jit International
Pan Jit International		mosfet
7PJD15N06LN-Channel Enhancement Mode MOSFET

PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters
Pan Jit International
Pan Jit International		mosfet



Esta página es del resultado de búsqueda del PJD16N08A-PDF.HTML. Si pulsa el resultado de búsqueda de PJD16N08A-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap