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PDF PJQ5465A Data sheet ( Hoja de datos )

Número de pieza PJQ5465A
Descripción 60V P-Channel Enhancement Mode MOSFET
Fabricantes Pan Jit International 
Logotipo Pan Jit International Logotipo



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PPJQ5465A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-16 A
DFN5060-8L
Features
RDS(ON), VGS@-10V,ID@-8A<48mΩ
RDS(ON), VGS@-4.5V,ID@-4A<65mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Marking: Q5465A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance (Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
-60
+20
-16
-10
-64
25
10
-5.0
-4.0
2.0
1.3
51
-55~150
5.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 21,2015-REV.00
Page 1

1 page




PJQ5465A pdf
PPJQ5465A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 21,2015-REV.00
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