DataSheet.es    


Datasheet PJQ5474A-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


PJQ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJQ1900N-Channel Enhancement Mode MOSFET

PPJQ1900 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.2 A Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.
Pan Jit International
Pan Jit International		mosfet
2PJQ1901P-Channel Enhancement Mode MOSFET

PPJQ1901 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -0.75A Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directiv
Pan Jit International
Pan Jit International		mosfet
3PJQ1902N-Channel Enhancement Mode MOSFET

PPJQ1902 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 500mA DFN3L Features  RDS(ON) , [email protected], ID@350mA<1.2Ω  RDS(ON) , [email protected], ID@200mA<1.6Ω  RDS(ON) , [email protected], ID@80mA<2.3Ω  RDS(ON) , [email protected], ID@10mA<2.5Ω(typ.)  Specially Designed f
Pan Jit International
Pan Jit International		mosfet
4PJQ2460N-Channel Enhancement Mode MOSFET

PPJQ2460 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 3.2A Features  RDS(ON) , VGS@10V, [email protected]<75mΩ  RDS(ON) , [email protected], [email protected]<90mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in comply with EU RoHS 201
Pan Jit International
Pan Jit International		mosfet
5PJQ2800N-Channel Enhancement Mode MOSFET

PPJQ2800 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.2A Features  RDS(ON) , [email protected], [email protected]<32mΩ  RDS(ON) , [email protected], [email protected]<45mΩ  RDS(ON) , [email protected], [email protected]<65mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance
Pan Jit International
Pan Jit International		mosfet
6PJQ281520V P-Channel Enhancement Mode MOSFET

PPJQ2815 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -4.2A Features  RDS(ON) , [email protected], [email protected]<52mΩ  RDS(ON) , [email protected], [email protected]<62mΩ  RDS(ON) , [email protected], [email protected]<73mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Appl
Pan Jit International
Pan Jit International		mosfet
7PJQ2888P-Channel Enhancement Mode MOSFET

PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode Voltage -20 V Current -1.5A DFN2020-8L Features  RDS(ON) , [email protected], [email protected]<325mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Desi
Pan Jit International
Pan Jit International		mosfet



Esta página es del resultado de búsqueda del PJQ5474A-PDF.HTML. Si pulsa el resultado de búsqueda de PJQ5474A-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap