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PDF PJQ5478 Data sheet ( Hoja de datos )
| Número de pieza | PJQ5478 | |
| Descripción | 100V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJQ5478
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
60A
DFN5060-8L
Features
RDS(ON) , VGS@10V, ID@30A<12mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Marking: Q5478
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
60
38
150
83
33
9
7.5
2.0
1.3
156
-55~150
1.5
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
August 18,2015-REV.00
Page 1
1 page  
PPJQ5478
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
August 18,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PJQ5478.PDF ] | |
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