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Infineon - Thermally-Enhanced High Power RF LDMOS FET

Numéro de référence PTVA127002EV
Description Thermally-Enhanced High Power RF LDMOS FET
Fabricant Infineon 
Logo Infineon 





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PTVA127002EV fiche technique
PTVA127002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 1200 – 1400 MHz
Description
The PTVA127002EV LDMOS FET is designed for use in power
amplifier applications in the 1200 to 1400 MHz frequency band.
Features include high gain and thermally-enhanced package with
bolt-down flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTVA127002EV
Package H-36275-4
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
65
Output Power
55
65
55
45 45
35 35
25 1200 MHz 25
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
Features
Broadband input and output matching
High gain and efficiency
Integrated ESD protection
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 700 W peak under RF pulse,
300 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
VDD = 50 V, IDQ = 150 mA per side, POUT = 700 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width,
12% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Gps
hD
DG
IRL
Min
15.5
50
Typ
16
56
1.0
–20
Max
1.3
–11
Unit
dB
%
dB
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2015-06-18

PagesPages 11
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