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PDF PXAC180602MD Data sheet ( Hoja de datos )
| Número de pieza | PXAC180602MD | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXAC180602MD
Thermally-Enhanced High Power RF LDMOS FET
60 W, 28 V, 1805 – 1880 MHz
Description
The PXAC180602MD is a 60-watt LDMOS FET with an asym-
metrical design intended for use in multi-standard cellular power
amplifier applications in the 1805 to 1880 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC180602MD
Package PG-HB1DSO-4-1
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
Efficiency
20
75
50
16
Gain
25
12 0
8
PAR @ 0.01% CCDF
4
-25
-50
0
27
pxac180602md_g1
-75
31 35 39 43 47
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Asymmetric Doherty design
- Main : P1dB = 20 W Typ
- Peak : P1dB = 40 W Typ
• Typical Pulsed CW performance, 1880 MHz,
28 V, 160 µs pulse width, 10% duty cycle, class AB,
Doherty Configuration
- Output power at P1dB = 10 W
- Efficiency = 58%
- Gain at P3dB = 19 dB
• Integrated ESD protection
• Human Body Model, Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)
VDD = 28 V, IDQ = 80 mA, POUT = 8.9 W avg, VGSPK = 160 mA–1.3 V, ƒ1 = 1840 MHz, 3GPP signal, channel bandwidth = 3.84
MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
16.5
51.0
—
Typ
17.7
54.5
–27.6
Max
—
—
–25
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2015-06-18
1 page  
PXAC180602MD
Load Pull Performance – P1dB
Main Side Load Pull Performance – CW signal: VDD = 28 V, IDQ = 85 mA, Class AB
P1dB
Max Output Power
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
[W]
[dB]
[dBm]
[W]
[%]
Zl
[W]
1805 7.3-j16.9 8.8-j10.33 20.55 43.62
23
63.4 12.8-j1.9
1843 6.6-j18.9
8.4-j10.4
20.71
43.29
21.33
60.8
11.8-j4.4
1880 8.3-j21.5
7.5-j9.3
20.67
43.30
21.38
63.4
9.3-j3.9
Max PAE
Gain
[dB]
POUT
[dBm]
21.86
41.73
22.12
42.10
21.86
41.87
Peak Side Load Pull Performance – CW signal: VDD = 28 V, VGSPK = 1.4 V
P1dB
Max Output Power
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
[W]
[dB]
[dBm]
[W]
[%]
Zl
[W]
1805 13.5 – j0.7 5.2 – j8.4 16.92
46.35
43.15
63.8
9.9 – j8.0
1842 7.7 – j0.2 4.7 – j8.4
16.8
46.43
43.95
63.3
9.0 – j7.1
1880 4.8 – j0.2 4.4 – j8.5
16.7
46.42
43.85
62.8
8.6 – j6.8
Max PAE
Gain
[dB]
POUT
[dBm]
17.51
45.09
17.47
45.14
17.36
44.99
POUT
[W]
14.89
16.22
15.38
POUT
[W]
32.28
32.66
31.55
PAE
[%]
70.8
69.6
69.4
PAE
[%]
72.3
72.7
72.4
Load Pull Performance – P3dB
Main Side Load Pull Performance – CW signal: VDD = 28 V, IDQ = 85 mA, Class AB
P3dB
Max Output Power
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
[W]
[dB]
[dBm]
[W]
[%]
Zl
[W]
1805 7.3-j16.9
9.0-j11.7
18.65
44.30
26.92
63.8
13.1-j7.1
1843 6.6-j18.9 9.0-j11.7 19 43.98 25
62.0 11.5-j5.9
1880 8.3-j21.5 8.9-j11.9 19.26 43.89
24.5
61.7 11.1-j6.4
Max PAE
Gain
[dB]
POUT
[dBm]
19.78
43.28
20 42.94
20.2 42.91
Peak Side Load Pull Performance – CW signal: VDD = 28 V, VGSPK = 1.4 V
P3dB
Max Output Power
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
[W]
[dB]
[dBm]
[W]
[%]
Zl
[W]
1805 13.5 – j0.7 5.1 – j9.2 14.94
47.00
50.12
64.4 10.0 – j8.3
1842 7.7 – j0.2 5.0 – j9.2
14.9
47.00
50.1
64.6 9.3 – j7.7
1880 4.8 – j0.2 4.6 – j9.35 14.72 47.00
50.1
63.3 8.1 – j7.2
Max PAE
Gain
[dB]
POUT
[dBm]
15.52
45.58
15.45
45.67
15.37
45.74
POUT
[W]
21.28
19.68
19.54
POUT
[W]
36.14
36.9
37.5
PAE
[%]
70.8
69.5
69.0
PAE
[%]
71.6
72.0
71.6
Data Sheet
5 of 10
Rev. 02.1, 2015-06-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PXAC180602MD.PDF ] | |
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