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Infineon - Thermally-Enhanced High Power RF LDMOS FET

Numéro de référence PXAC182002FC
Description Thermally-Enhanced High Power RF LDMOS FET
Fabricant Infineon 
Logo Infineon 





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PXAC182002FC fiche technique
PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC182002FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
Efficiency
20
60
40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
c182002fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
Broadband internal input and output matching
Asymmetrical Doherty design
- Main: 70 W Typ (P1dB)
- Peak: 110 W Typ (P1dB)
Typical pulsed CW performance, 1880 MHz, 28 V,
combined outputs
- Output power at P3dB = 194 W
- Efficiency = 64%
- Gain = 14 dB
Capable of handling 10:1 VSWR @28 V, 110 W
(CW) output power
Integrated ESD protection
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 400 mA, VGSPEAK = 1.1 V, POUT = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84
MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min
15.5
48.5
Typ
16.5
51
–30
Max
–26
Unit
dB
%
dBc
Rev. 02.3, 2016-06-17

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