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BSN011NE2LS fiches techniques PDF

Infineon - Power-MOSFET

Numéro de référence BSN011NE2LS
Description Power-MOSFET
Fabricant Infineon 
Logo Infineon 





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BSN011NE2LS fiche technique
OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Very low parasitic inductance
• Low profile (<0.5 mm)
• Double side cooling
• N-channel
• 100% avalanche tested
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC1) for target applications
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
BSN011NE2LS
25 V
1.1 mW
50 A
32 nC
54 nC
LG-USON-6-1
Type
BSN011NE2LS
Package
LG-USON-6-1
Marking
011NE2L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
V GS
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 W
Rev. 2.0
page 1
Value
50
50
50
50
33
200
50
145
±20
Unit
A
mJ
V
2014-05-23

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