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PDF 1SS154 Data sheet ( Hoja de datos )
| Número de pieza | 1SS154 | |
| Descripción | DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SS154 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS154
1SS154
UHF~S Band Mixer/Detector Applications
• Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 6 V
IF 30 mA
Tj 125 °C
Tstg
−30~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Forward voltage
Total capacitance
Symbol
VR
IR
VF (1)
VF (2)
CT
Test Condition
IR = 10 μA
VR = 5 V
IF = 0.1 mA
IF = 10 mA
VR = 0, f = 1 MHz
Marking
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 12 mg (typ.)
Min Typ. Max Unit
6 ⎯⎯ V
⎯ ⎯ 0.5 μA
⎯ ⎯ 0.35 V
⎯ 0.5 ⎯
V
⎯ 0.8 ⎯ pF
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS154.PDF ] | |
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