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IPB120N04S4L-02 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB120N04S4L-02
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB120N04S4L-02 fiche technique
Data Sheet
IPB120N04S4L-02
OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
VDS
RDS(on),max
ID
40 V
1.7 mΩ
120 A
PG-TO263-3-2
Type
IPB120N04S4L-02
Package
PG-TO263-3-
Marking
4N04L02
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
120
120
480
480
120
+20/-16
158
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-06-03

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