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Número de pieza | NTMFS6B03N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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Power MOSFET
100 V, 4.8 mW, 132 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 2, 3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
100
±20
132
83
165
65
19
12
3.4
1.4
470
−55 to
+ 150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 60 A)
IS 160 A
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
4.8 mW @ 10 V
ID MAX
132 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 6B03N
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 1
1
Publication Order Number:
NTMFS6B03N/D
1 page NTMFS6B03N
140
120
100
80
60
40
20
0
0
TYPICAL CHARACTERISTICS
100
10
25°C
100°C
20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 12. GFS vs. ID
1
100E−6
1E−3
TAV, TIME IN AVALANCHE (sec)
Figure 13. IPEAK vs. TAV
10E−3
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
0.01 Single Pulse
NTMFS6B03N, 650 mm2, 2 oz, Cu Single Layer Pad
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 14. Thermal Response
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS6B03NT1G
6B03N
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS6B03NT3G
6B03N
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMFS6B03N.PDF ] |
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