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PDF NTR3C21NZ Data sheet ( Hoja de datos )
| Número de pieza | NTR3C21NZ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTR3C21NZ
Power MOSFET
20 V, 3.6 A, Single N−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Advanced Trench Technology
• Ultra−Low RDS(on) in SOT−23 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±8
3.6
2.6
6.5
0.47
V
V
A
W
t≤5s
1.56
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
IS
TL
13.2
−55 to
150
2.2
260
A
°C
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
264 °C/W
80
www.onsemi.com
V(BR)DSS
20 V
RDS(on) Max
24 mW @ 4.5 V
26 mW @ 3.7 V
29 mW @ 3.3 V
33 mW @ 2.5 V
55 mW @ 1.8 V
ID MAX
3.6 A
N−Channel MOSFET
D3
G
1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
TRY MG
G
1
Gate
2
Source
TRY = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR3C21NZT1G SOT−23 3000 / Tape &
(Pb−Free)
Reel
NTR3C21NZT5G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NTR3C21NZ/D
1 page  
NTR3C21NZ
TYPICAL CHARACTERISTICS
1000
100 50% Duty Cycle
20%
10 10%
5%
2%
1
1%
0.1
0.000001 0.00001
0.0001
Single Pulse
0.001
0.01 0.1
PULSE TIME (sec)
Figure 12. FET Thermal Response
1
10 100 1000
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR3C21NZ.PDF ] | |
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