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Numéro de référence | CS8N60 | ||
Description | N-Channel MOSFET | ||
Fabricant | FOSHAN BLUE ROCKET | ||
Logo | |||
BR8N60(CS8N60)
N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VDSS 600 V
ID(Tc=25℃)
8A
ID(Tc=100℃)
4.6 A
IDM 30 A
VGSS
±30
V
EAS 230 mJ
EAR 10 mJ
IAR 7.5 A
PD(Tc=25℃)
48 W
TJ,TSTG
-55 to 150 ℃
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
测试条件
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=600V
VDS=480V
VGS=0V
TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=3.75A
gFS
VDS=40V
ID=3.75A
VSD
VGS=0V
IS=7.5A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr
td(off)
VDD=300V ID=7.5A RG=25Ω
tf
最小值
Min
600
2.0
典型值
Typ
1.0
8.7
965
105
12
16.5
60.5
81
64.5
最大值
Max
1.0
10
±0.1
4.0
1.2
1.4
1255
135
16
45
130
170
140
佛山 市蓝箭电子有限公司
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
单位
Unit
V
μA
μA
μA
V
Ω
S
V
pF
ns
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Pages | Pages 2 | ||
Télécharger | [ CS8N60 ] |
No | Description détaillée | Fabricant |
CS8N60 | N-Channel MOSFET | FOSHAN BLUE ROCKET |
CS8N60A8D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS8N60A8H | Silicon N-Channel Power MOSFET | HUAJING MICROELECTRONICS |
CS8N60ARD | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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