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PDF SCH2809 Data sheet ( Hoja de datos )

Número de pieza SCH2809
Descripción P-Channel Silicon MOSFET
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! SCH2809 Hoja de datos, Descripción, Manual

SCH2809
Ordering number : ENA0446
SCH2809
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained
in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QJ
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--12
±10
--1.2
--4.8 A
0.6
150
--55 to +125
V
V
A
W
°C
°C
15
15
0.5
3
--55 to +125
--55 to +125
V
V
A
A
°C
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2809/D

1 page




SCH2809 pdf
SCH2809
IF -- VF
[SBD]
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF -- V
IT06804
PF(AV) -- IO
[SBD]
0.9
Rectangular wave
(1) (2) (4) (3)
0.8
θ
0.7
360°
0.6 Sine wave
0.5
180°
0.4 360°
0.3
0.2 (1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
0.1 (3) Rectangular wave θ=180°
0 (4) Sine wave θ=180°
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Average Output Current, IO -- A IT06806
IFSM -- t
[SBD]
3.5
Current waveform 50Hz sine wave
3.0
IS
2.5 20ms
t
2.0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0
7
5
3
2
10
7
5
1.0
1.5
1.0
0.5
0
7 0.01 2 3
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00338
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
[SBD]
5 10
Reverse Voltage, VR -- V
C -- VR
15
IT06805
[SBD]
f=1MHz
23
5 7 10
Reverse Voltage, VR -- V
23
IT06807
Rev.0 I Page 5 of 6 I www.onsemi.com

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