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PDF TND027SW Data sheet ( Hoja de datos )
| Número de pieza | TND027SW | |
| Descripción | Excellent Power Device | |
| Fabricantes | ON Semiconductor | |
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Ordering number : EN7437D
TND027SW
Excellent Power Device
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8
http://onsemi.com
Features
• N-channel MOSFET built in
• Halogen free compliance
• Overheat protection (Self recovery type)
• Overcurrent protection (Self recovery type current limiting function)
• Overvoltage protection
• Incorporates two sets of circuit
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Output Current
Input Voltage
Symbol
VDS
IO(DC)
VIN
Allowable Power Dissipation
PD
Operating Supply Voltage
Operating Temperature
Junction Temperature
Storage Temperature
VDS(opr)
Topr
Tj
Tstg
Conditions
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
60
1.5
--0.3 to +10
1.3
1.7
40
--40 to +85
150
--55 to +150
Unit
V
A
V
W
W
V
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-003
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
0.22 TND027SW-TL-2H
Packing Type: TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : GND1
2 : IN1
3 : GND2
4 : IN2
5 : OUT2
6 : OUT2
7 : OUT1
8 : OUT1
SOIC8
TND
027
TL
LOT No.
Block Diagram
OUT(D)
IN
ESD
protective
circuit
Overcurrent
protective
circuit
Overvoltage
protective circuit
Output current
control
Overheat
protective
circuit
Gate
shutdown
circuit
GND(S)
Semiconductor Components Industries, LLC, 2013
August, 2013
D0512 TKIM TC-00002832/O2611 TKIM/D2607IP TIIM TC-00001114/ No.7437-1/9
O2203 TSIM/51503 TSIM TA-100479
1 page  
TND027SW
Operation Description
• The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V
is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output
power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp
will be turned off.
• The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent
protecting circuit, which makes the lamp life longer.
• The internal overcurrent protection function limits the current of output power MOSFET when output current of at
least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the
allowable power dissipation, overheat protection function protects the power switch from being broken down by
turning off the current of output power MOSFET when Tj comes to 150°C (typical).
• As an example of application circuit, DC voltage can also be controlled as a solenoid drive.
Addition
• The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET.
• Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving
a solenoid or a motor.
• Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal
under the above-stated state (that is, OUT Voltage < GND Voltage).
No.7437-5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TND027SW.PDF ] | |
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