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ON Semiconductor - Excellent Power Device

Numéro de référence TND314S
Description Excellent Power Device
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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TND314S fiche technique
Ordering number : ENA0420A
TND314S
Excellent Power Device
Dual inverter driver for general purpose, Dual SOIC8
http://onsemi.com
Features
Dual inverter
Monolithic structure (High voltage CMOS process adopted)
Withstand voltage of 25V is assured
Wide range of operating voltage : 4.5V to 25V
Peak output current : 1A
Fast switching time (25ns typical at 1000pF load)
Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V)
Built-in input pull-down resistance
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Supply Voltage
Input Voltage
Allowable Power Dissipation
Junction Temperature
VDD
VIN
PD max
Tj
Storage Temperature
Tstg
Conditions
Ratings
0 to 25
GND--0.3 to VDD+0.3
0.3
--55 to +150
--55 to +150
Unit
V
V
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-005
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
TND314S-TL-2H
0.22
Packing Type: TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : NC
2 : IN A
3 : GND
4 : IN B
5 : OUT B
6 : VDD
7 : OUT A
8 : NC
SOIC8
TL
Block Diagram
VDD
TND
314
LOT No.
IN OUT
Semiconductor Components Industries, LLC, 2013
August, 2013
GND
92612 TKIM TC-00002820/D0606IP TIIM TB-00001538 No. A0420-1/8

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