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VN0610LL fiches techniques PDF

ON Semiconductor - FET Transistor

Numéro de référence VN0610LL
Description FET Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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VN0610LL fiche technique
VN0610LL
FET Transistor
NChannel — Enhancement
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain Gate Voltage (RGS = 1 MΩ)
Gate Source Voltage
Continuous
Nonrepetitive (tp 50 μs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16” from case
for 10 seconds
Symbol
VDSS
VDGR
Value
60
60
Unit
Vdc
Vdc
VGS
VGSM
ID
IDM
PD
TJ, Tstg
± 20
± 40
190
1000
400
3.2
55 to +150
Vdc
Vpk
mAdc
mW
mW/°C
°C
Symbol
RθJA
TL
Max
312.5
300
Unit
°C/W
°C
http://onsemi.com
1
23
CASE 2911, STYLE 22
TO92 (TO226AA)
3 DRAIN
2
GATE
1 SOURCE
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
VN0610LL/D

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