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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF10M6135
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF10M6135 fiche technique
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range

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