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PDF BLF178XRS Data sheet ( Hoja de datos )
| Número de pieza | BLF178XRS | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
VDS
PL
(V) (W)
50 1200
50 1400
Gp
(dB)
23
28
D
(%)
80
72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
&RVV
S)
DDD
9'6 9
Fig 2.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF178XR and BLF178XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.
7.2 Impedance information
gate 1
Zi
gate 2
Fig 3. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f
(MHz)
Zi
()
ZL
()
108 2.35 j6.06
2.78 + j0.48
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
Description
CW Continuous Wave
ESD
ElectroStatic Discharge
HF High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
BLF178XR_BLF178XRS v.4
Modifications:
BLF178XR_BLF178XRS v.3
Modifications:
BLF178XR_BLF178XRS v.2
BLF178XR_BLF178XRS v.1
Release date Data sheet status Change notice Supersedes
20130712
Product data sheet -
• The package outline Figure 12 is updated.
BLF178XR_BLF178XRS v.3
20120625
Product data sheet -
BLF178XR_BLF178XRS v.2
• The status of this document has been changed to Product data sheet.
20120515
Preliminary data sheet -
BLF178XR_BLF178XRS v.1
20120130
Objective data sheet -
-
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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