DataSheetWiki


BLF184XRS fiches techniques PDF

NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF184XRS
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





1 Page

No Preview Available !





BLF184XRS fiche technique
BLF184XR; BLF184XRS
Power LDMOS transistor
Rev. 3 — 1 April 2014
Product data sheet
1. Product profile
1.1 General description
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 108
VDS
PL
(V) (W)
50 700
50 750
Gp
(dB)
23.9
23.5
D
(%)
73.5
81.9
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

PagesPages 15
Télécharger [ BLF184XRS ]


Fiche technique recommandé

No Description détaillée Fabricant
BLF184XR Power LDMOS transistor NXP Semiconductors
NXP Semiconductors
BLF184XRG Power LDMOS transistor NXP Semiconductors
NXP Semiconductors
BLF184XRS Power LDMOS transistor NXP Semiconductors
NXP Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche