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PDF BLF188XR Data sheet ( Hoja de datos )
| Número de pieza | BLF188XR | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF188XR; BLF188XRS
Power LDMOS transistor
Rev. 5 — 12 November 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 2 to 30
27
41
60
72.5
81.4
88 to 108
108
200
pulsed RF
81.4
81.4
108
DVB-T
174 to 230
VDS
PL
(V) (W)
50 1270
50 1400
50 1200
48 1240
50 1350
50 1200
50 1320
50 1200
50 1288
50 1200
50 1400
50 1400
50 225
Gp
(dB)
29.0
23.7
22.0
22.0
23.1
27.1
22.5
26.5
19.3
25.8
25.4
24.0
23.8
D
(%)
75
73
82
77
83
77.8
85
83
68.3
85
81
73
29
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLF188XR; BLF188XRS
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF188XR and BLF188XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.
7.2 Impedance information
JDWH
=L
JDWH
Fig 3. Definition of transistor impedance
GUDLQ
=/
GUDLQ
DDQ
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f Zi
ZL
(MHz)
()
()
108 2.94 j9.64
2.74 + j0.57
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS EAS
(A) (J)
35 4.5
40 3.4
45 2.4
50 2.0
For information see application note “AN10273”.
BLF188XR_BLF188XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 November 2013
© NXP B.V. 2013. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BLF188XR; BLF188XRS
Power LDMOS transistor
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BLF188XR_BLF188XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 November 2013
© NXP B.V. 2013. All rights reserved.
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