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PDF BLF2324M8LS200P Data sheet ( Hoja de datos )
| Número de pieza | BLF2324M8LS200P | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF2324M8LS200P
Power LDMOS transistor
Rev. 1 — 3 June 2014
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz
to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
1740 28 60
17.2 32 37 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
1 page  
NXP Semiconductors
BLF2324M8LS200P
Power LDMOS transistor
7.4 Graphical data
7.4.1 1-Tone CW
*S
G%
*S
DDD
Ș'
Ș'
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
7.4.2 1-Tone CW pulsed
*S
G%
DDD
Ș'
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 4. Power gain and drain efficiency as function of output power; typical values
BLF2324M8LS200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF2324M8LS200P
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 June 2014
Document identifier: BLF2324M8LS200P
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