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PDF BLF2425M7L250P Data sheet ( Hoja de datos )
| Número de pieza | BLF2425M7L250P | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 250
15
D
(%)
51
1.2 Features and benefits
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
1 page  
NXP Semiconductors
BLF2425M7L(S)250P
Power LDMOS transistor
Table 9. List of components
For test circuit, see Figure 2.
Component
Description
C1, C2, C3, C11,
C12, C13
multilayer ceramic chip capacitor
C4, C7, C14, C16 SMD capacitor
C5, C8, C15, C17 SMD capacitor
C6, C19
multilayer ceramic chip capacitor
C9, C10
multilayer ceramic chip capacitor
C18 electrolytic capacitor
R1 resistor
R2, R3
resistor
Value
36 pF
470 nF, 50 V
10 F, 50 V
1.4 pF
1.8 pF
470 F, 63 V
9.1
5.1
7.4 Graphical data
Remarks
ATC800B
ATC100B
ATC100B
SMD 0805
SMD 0805
*S
G%
*S
Ș'
DDD
Ș'
*S
G%
*S
Ș'
DDD
Ș'
3/ G%P
3/ :
VDS = 28 V; IDq = 20 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
VDS = 28 V; IDq = 20 mA.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values
BLF2425M7L250P_2425M7LS250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Handling information. . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF2425M7L(S)250P
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 July 2013
Document identifier: BLF2425M7L250P_2425M7LS250P
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BLF2425M7L250P.PDF ] | |
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