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PDF BLF642 Data sheet ( Hoja de datos )
| Número de pieza | BLF642 | |
| Descripción | Broadband power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 C in a common source test circuit.
Mode of operation
f
VDS
PL
(MHz)
(V) (W)
CW, class-AB
1300
32 35
2-tone, class-AB
1300
32 17.5
Gp
(dB)
19
19
D IMD
(%) (dBc)
63 -
48 28
1.2 Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
Average output power = 35 W
Power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
Average output power = 17.5 W
Power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion = 28 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page  
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
8.1.2 2-Tone CW
21
GP
(dB)
20
GP
001aan777 80
ηD
(%)
60
0
IMD3
(dBc)
-20
001aan778
19
ηD
18
17
0 10
40
20
0
20 30
PL(AV) (W)
-40
-60
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10 20 30
PL(AV) (W)
VDS = 32 V; IDq = 200 mA; f = 1300 MHz;
carrier spacing = 100 kHz.
Fig 3. Power gain and drain efficiency as function of
average load power; typical values
VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 150 mA
(4) IDq = 200 mA
(5) IDq = 250 mA
(6) IDq = 300 mA
(7) IDq = 350 mA
Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
8.1.3 Pulsed CW
22
Gp
(dB)
20
Gp
001aao319 80
ηD
(%)
60
ηD
18
40
16 20
BLF642
Product data sheet
14
0
0
10 20 30 40 50
PL (W)
VDS = 32 V; IDq = 200 mA; f = 1300 MHz
Fig 5. Power gain and drain efficiency as a function of average power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF642
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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