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NXP Semiconductors - UHF power LDMOS transistor

Numéro de référence BLF888DS
Description UHF power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF888DS fiche technique
BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1. Application information
RF performance at VDS = 50 V in an ultra wide Doherty application.
Test signal
f
PL(AV)
Gp D
(MHz)
(W)
(dB) (%)
DVB-T (8k OFDM)
470 to 860 115 to 134 [1] 17 40 to 48 [1]
IMDshldr
(dBc)
38 to 44 [2]
PAR
(dB)
8 [3]
[1] Depending on selected channel.
[2] Depending on exciter used.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness (VSWR 40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
Internal input matching for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting

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