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Numéro de référence | MTB010N06I3 | ||
Description | N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | CYStech Electronics | ||
Logo | |||
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
50A
RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB010N06I3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06I3
CYStek Product Specification
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Pages | Pages 8 | ||
Télécharger | [ MTB010N06I3 ] |
No | Description détaillée | Fabricant |
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