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MTB010N06I3 fiches techniques PDF

CYStech Electronics - N-Channel Enhancement Mode Power MOSFET

Numéro de référence MTB010N06I3
Description N-Channel Enhancement Mode Power MOSFET
Fabricant CYStech Electronics 
Logo CYStech Electronics 





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MTB010N06I3 fiche technique
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
50A
RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB010N06I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06I3
CYStek Product Specification

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