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PDF MTB09P04DFP Data sheet ( Hoja de datos )
| Número de pieza | MTB09P04DFP | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB09P04DFP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB09P04DFP BVDSS
ID @ VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-15A
-40V
-56A
6.1mΩ(typ)
7.8mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
Symbol
MTB09P04DFP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
MTB09P04DFP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09P04DFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=-250μA
1.2
1000
1
C oss
0.8
Crss
100
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
-ID, Drain Current(A)
100
1000
100
10
1
0.1
Maximum Safe Operating Area
RDS(ON)
Limit
TC=25°C, Tj=150°, VGS=-10V
RθJC=1.4°C/W, Single Pulse
DC
10μs
100μs
1ms
10ms
100ms
0.01
0.01
0.1 1 10
-VDS, Drain-Source Voltage(V)
100
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-20V
8
VDS=-10V
6
VDS=-32V
4
2
ID=-25A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
100
90 Silicon Limit
80
70
60
50
40 Limited by package
30
20
10 VGS=-10V, RθJC=1.4°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB09P04DFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB09P04DFP.PDF ] | |
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