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PDF MTB20C06KQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB20C06KQ8 | |
| Descripción | N- AND P-Channel Enhancement Mode MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB20C06KQ8
BVDSS
ID@VGS=10V(-10V)
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
RDSON(TYP.)@VGS=4V(-4V)
N-CH
60V
6A
18.1mΩ
20.5mΩ
21.7mΩ
P-CH
-60V
-5A
27.9mΩ
41.4mΩ
47.8mΩ
Description
The MTB20C06KQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Common drain structure
• Pb-free lead plating and halogen-free package
Ordering Information
Device
MTB20C06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20C06KQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
24
10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V
20
1.4
1.2
Brekdown Voltage vs Ambient Temperature
16
12
8
4
0
0
3.5V
VGS=3V
1 23 4
VDS, Drain-Source Voltage(V)
5
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4V
1
Tj=25°C
0.8
10
0.01
VGS=4.5V
VGS=10V
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=6A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
2468
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8 VGS=10V, ID=6A
1.6
1.4
1.2
1
0.8
0.6 RDS(ON)@Tj=25°C : 18.1mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB20C06KQ8
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date :
Page No. : 11/13
Carrier Tape Dimension
MTB20C06KQ8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTB20C06KQ8.PDF ] | |
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