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MMFT2N02EL fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence MMFT2N02EL
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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MMFT2N02EL fiche technique
MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
NChannel SOT223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dcdc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT223 package which is
designed for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic Level
ICs, VGS(th) = 2 Volts Max
The SOT223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDS
20
GatetoSource Voltage Continuous
VGS ± 15
Drain Current Continuous
Drain Current Pulsed
ID 1.6
IDM 6.4
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
(Note 1.)
0.8
6.4
Unit
Vdc
Adc
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
65 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 10 V, VGS = 5 V, Peak
IL= 2 A, L = 0.2 mH, RG = 25 Ω)
THERMAL CHARACTERISTICS
EAS
66 mJ
Thermal Resistance
JunctiontoAmbient (surface mounted)
RθJA
156 °C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
260 °C
TL
10 Sec
1. Power rating when mounted on FR4 glass epoxy printed circuit board using
recommended footprint.
http://onsemi.com
2 AMPERES
20 VOLTS
RDS(on) = 150 mW
NChannel
D
G
S
MARKING
DIAGRAM
12
3
4 TO261AA
CASE 318E
STYLE 3
2N02L
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT2N02ELT1 SOT223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MMFT2N02EL/D

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