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PDF VN2222LLG Data sheet ( Hoja de datos )

Número de pieza VN2222LLG
Descripción Small Signal MOSFET
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! VN2222LLG Hoja de datos, Descripción, Manual

VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
NChannel TO92
Features
This is a PbFree Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain Source Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
60 Vdc
60 Vdc
± 20
± 40
150
1000
400
3.2
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, 1/16from case
for 10 seconds
RqJA
TL
312.5
300
°C/W
°C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
150 mA, 60 V
RDS(on) = 7.5 W
NChannel
D
G
S
123
TO92
CASE 29
STYLE 22
MARKING DIAGRAM
& PIN ASSIGNMENT
VN22
22LL
AYWW G
G
1
Source
2
Gate
3
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 4
1
Publication Order Number:
VN2222LL/D

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