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ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence MTW32N20E
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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MTW32N20E fiche technique
MTW32N20E
Power MOSFET
32 Amps, 200 Volts
NChannel TO247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole
This is a PbFree Device*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage Continuous
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
ID
ID
IDM
PD
200 Vdc
200 Vdc
± 20 Vdc
32 Adc
19
128 Apk
180 W
1.44 W/°C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vpk,
IL = 32 Apk, L = 1.58 mH, RG = 25 W )
EAS
810 mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RRqqJJCA
0.7 °C/W
40
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 8
1
http://onsemi.com
32 AMPERES, 200 VOLTS
RDS(on) = 75 mW
NChannel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4 Drain
1
MTW32N20E
AYWWG
TO247
CASE 340L
STYLE 1
1
Gate
3
Source
2
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MTW32N20EG
TO247
(PbFree)
30 Units/Rail
Publication Order Number:
MTW32N20E/D

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