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Fairchild Semiconductor - N-Channel PowerTrench SyncFETTM

Numéro de référence FDMS8570SDC
Description N-Channel PowerTrench SyncFETTM
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS8570SDC fiche technique
FDMS8570SDC
N-Channel PowerTrench® SyncFETTM
July 2013
25 V, 60 A, 2.8 mΩ
Features
„ Dual CoolTM PQFN package
„ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A
„ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 25 A
„ High performance technology for extremely low rDS(on)
„ SyncFETTM Schottky Body Diode
„ RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
25
12
60
28
100
45
59
3.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
4.4
2.1
38
81
16
23
11
°C/W
Device Marking
10DC
Device
FDMS8570SDC
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
1
www.fairchildsemi.com

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