DataSheetWiki


BFG424F fiches techniques PDF

Philips - NPN 25 GHz wideband transistor

Numéro de référence BFG424F
Description NPN 25 GHz wideband transistor
Fabricant Philips 
Logo Philips 





1 Page

No Preview Available !





BFG424F fiche technique
BFG424F
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Very high power gain
s Low noise figure
s High transition frequency
s Emitter is thermal lead
s Low feedback capacitance
1.3 Applications
s Radio Frequency (RF) front end wideband applications such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVison (SATV) tuners
x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
VCBO
VCEO
IC
Ptot
collector-base voltage open emitter
collector-emitter voltage open base
collector current
total power dissipation Tsp 90 °C
Min Typ Max Unit
- - 10 V
- - 4.5 V
- 25 30 mA
[1] - - 135 mW

PagesPages 13
Télécharger [ BFG424F ]


Fiche technique recommandé

No Description détaillée Fabricant
BFG424F (BFGxxx) RF Bipolar Transistors Philips
Philips
BFG424F NPN 25 GHz wideband transistor Philips
Philips
BFG424W (BFGxxx) RF Bipolar Transistors Philips
Philips

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche