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PDF IKW30N65ES5 Data sheet ( Hoja de datos )
| Número de pieza | IKW30N65ES5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IGBT
TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode
IKW30N65ES5
650VTRENCHSTOPTM5highspeedsoftswitchingduopak
Datasheet
IndustrialPowerControl
1 page  
IKW30N65ES5
TRENCHSTOPTM5softswitchingIGBT
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.35 1.70
1.50 -
V
- 1.60 -
-
-
1.45 1.70
1.42 -
V
- 1.39 -
3.2 4.0 4.8 V
- - 50 µA
- 1400 -
- - 100 nA
- 42.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1800 -
- 55 - pF
-7-
- 70.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=13.0Ω,RG(off)=13.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 17 - ns
- 12 - ns
- 124 - ns
- 30 - ns
- 0.56 - mJ
- 0.32 - mJ
- 0.88 - mJ
5 Rev.2.1,2015-09-22
5 Page 
IKW30N65ES5
TRENCHSTOPTM5softswitchingIGBT
2.00
1.75
1.50
1.25
Eoff
Eon
Ets
1.50
1.25
Eoff
Eon
Ets
1.00
1.00 0.75
0.75
0.50
0.50
0.25
0.25
0.00
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RGon=13Ω,RGoff=13Ω,dynamictest
circuit in Figure E)
0.00
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=30A,RGon=13Ω,RGoff=13Ω,dynamictest
circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12 1000
10
8 100
6
4 10
2
0
0 10 20 30 40 50
QGE,GATECHARGE[nC]
Figure 15. Typicalgatecharge
(IC=30A)
60
1
70 0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11 Rev.2.1,2015-09-22
11 Page | ||
| Páginas | Total 16 Páginas | |
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