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NXP Semiconductors - single N-channel Trench MOSFET

Numéro de référence PMPB85ENEA
Description single N-channel Trench MOSFET
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PMPB85ENEA fiche technique
PMPB85ENEA
60 V, single N-channel Trench MOSFET
19 December 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
[1] - - 4.4 A
- 72 95 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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