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PDF PMV250EPEA Data sheet ( Hoja de datos )
| Número de pieza | PMV250EPEA | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMV250EPEA
40 V, P-channel Trench MOSFET
20 June 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• 1 kV ESD protected
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -1.3 A; Tj = 25 °C
Min Typ Max Unit
- - -40 V
-20 -
20 V
[1] - - -1.5 A
- 180 240 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV250EPEA
40 V, P-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 15 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-011994
Zth(j-a)
(K/W) duty cycle = 1
102 0.50
0.25
0.75
0.33
0.20
0.10
0.05
10 0.02
0.01
0
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-011995
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.50
0.33
0.25 0.20
0.10 0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV250EPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
12. Package outline
Plastic surface-mounted package; 3 leads
D
B
PMV250EPEA
40 V, P-channel Trench MOSFET
SOT023
E AX
3
1
e1 bp
e
2
wB
HE v A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
Dimensions (mm are the original dimensions)
Unit A A1 bp c D E e e1 HE Lp Q v w
max 1.1 0.1 0.48 0.15 3.0 1.4
2.5 0.45 0.55
mm nom
1.9 0.95
0.2 0.1
min 0.9
0.38 0.09 2.8 1.2
2.1 0.15 0.45
Outline
version
SOT023
IEC
References
JEDEC
JEITA
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
PMV250EPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 June 2014
European
projection
sot023_po
Issue date
06-03-16
14-06-19
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMV250EPEA.PDF ] | |
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