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PDF PMV30UN2 Data sheet ( Hoja de datos )
| Número de pieza | PMV30UN2 | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMV30UN2
20 V, N-channel Trench MOSFET
24 April 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• Enhanced power dissipation capability of 1000 mW
3. Applications
• LED driver
• Power management
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 5.4 A
- 24 32 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV30UN2
20 V, N-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 20 25 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-012832
Zth(j-a)
(K/W) duty cycle = 1
102 0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
10 0
0.01
1
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-012833
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33 0.2
0.25
0.1
10
0
0.05
0.02
0.01
1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV30UN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
3.3
2.9
1.9
PMV30UN2
20 V, N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV30UN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMV30UN2.PDF ] | |
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