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PDF PMV65XPEA Data sheet ( Hoja de datos )
| Número de pieza | PMV65XPEA | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMV65XPEA
20 V, P-channel Trench MOSFET
27 November 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Trench MOSFET technology
• Very fast switching
• Enhanced power dissipation capability: Ptot = 890 mW
• ElectroStatic Discharge (ESD) protection 2 kV HBM
• AEC-Q101 qualified
3. Applications
• Relay driver
• High speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
resistance
- 67 78 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
230 260 K/W
[2] -
120 140 K/W
[2] -
85 100 K/W
- 15 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
Zth(j-a)
(K/W) duty cycle = 1
102 0.50
0.25
0.75
0.33
0.20
0.10
0.05
10 0.02
0.01
0
aaa-011994
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV65XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
11. Test information
PMV65XPEA
20 V, P-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
t
006aaa812
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
Dimensions in mm
Fig. 18. Package outline TO-236AB (SOT23)
1.9
2
0.48
0.38
0.15
0.09
04-11-04
PMV65XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
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