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PSMN011-60MS fiches techniques PDF

NXP Semiconductors - N-channel MOSFET

Numéro de référence PSMN011-60MS
Description N-channel MOSFET
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PSMN011-60MS fiche technique
PSMN011-60MS
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
4 June 2013
Product data sheet
1. General description
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
3. Applications
AC-to-DC converters
Synchronous rectification
DC-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 15 A; VDS = 30 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 60 V
- - 61 A
- - 91 W
-55 -
175 °C
- 9.6 11.3 mΩ
- 5.8 - nC
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