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Numéro de référence | PSMN011-60MS | ||
Description | N-channel MOSFET | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PSMN011-60MS
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
4 June 2013
Product data sheet
1. General description
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for standard level gate drive sources
• LFPAK33 package is footprint compatible with other 3.3mm types
• Qualified to 175 °C
3. Applications
• AC-to-DC converters
• Synchronous rectification
• DC-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 15 A; VDS = 30 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 60 V
- - 61 A
- - 91 W
-55 -
175 °C
- 9.6 11.3 mΩ
- 5.8 - nC
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Pages | Pages 13 | ||
Télécharger | [ PSMN011-60MS ] |
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