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Numéro de référence | 2N6649 | ||
Description | Darlington Power Transistor | ||
Fabricant | TAITRON | ||
Logo | |||
1 Page
Darlington Power Transistor
2N6383-2N6385 2N6648-2N6650
Darlington Power Transistor
NPN: 2N6383, 2N6384, 2N6385
PNP: 2N6648, 2N6649, 2N6650
Features
• High Gain Dalington Performance
• DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
• True Complementary Specifications
• RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
TO-3, Metal Can Package
Solderable per MIL-STD-750
20 grams (approx)
Maximum Ratings (TC=25ºC unless noted otherwise)
Symbol
Description
2N6383
2N6648
2N6384
2N6649
VCBO
Collector-Base Voltage
40 60
VCEO
Collector-Emitter Voltage
40
60
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
IC
Collector Current (Peak)
10
15
IB
PD
RθJC
TJ, TSTG
Base Current
Total Power Dissipation
at TC=25°C
Derate above TA=25°C
Thermal Resistance from
Junction to Case
Operating Junction and
Storage Temperature Range
0.25
100
0.571
1.75
-65 to +200
TO-3
2N6385
2N6650
80
80
Unit
V
V
V
A
A
W
W/°C
°C /W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/CZ
Page 1 of 7
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Pages | Pages 7 | ||
Télécharger | [ 2N6649 ] |
No | Description détaillée | Fabricant |
2N6648 | POWER TRANSISTORS(10A/100W) | Mospec Semiconductor |
2N6648 | (2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
2N6648 | Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
2N6648 | Darlington Power Transistor | TAITRON |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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