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PDF 4N65Z-E Data sheet ( Hoja de datos )
| Número de pieza | 4N65Z-E | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4N65Z-E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
4N65Z-E
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65Z-E is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 3.1Ω @ VGS=10V, ID=2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65ZL- TF1-T
4N65ZG-TF1-T
4N65ZL- TN3-T
4N65ZG-TN3-T
4N65ZL- TN3-R
4N65ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-995. A
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4N65Z-E
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
RL
VGS
RG
VDD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Power MOSFET
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 4N65Z-E.PDF ] | |
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