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PDF BUY25CS12K-11 Data sheet ( Hoja de datos )
| Número de pieza | BUY25CS12K-11 | |
| Descripción | HiRel RadHard Power-MOS | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Data Sheet BUY25CS12K-01
HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad approved (Level R)
Hermetically sealed
N-channel
1
2
3
4
Type
BUY25CS12K-01
BUY25CS12K-11
Marking
-
-
Pin Configuration
123
D SG
G DS
Package
4
Not connected TO-257AA
Not connected TO-257AA
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Source Current
Drain Current Pulsed, tp limited by Tjmax
Total Power Dissipation 1)
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Symbol
VDS
VGS
VDG
ID
IS
IDM
Ptot
TJ
Top
EAS
Values
250
+/- 20
250
12.4
8
12.4
50
75
-55 to + 150
-55 to + 150
60
Thermal Characteristics
Thermal Resistance (Junction to Case)
Soldering Temperature
Notes.:
1) For TS ≤ 25°C. For TS > 25°C derating is required.
Rth JC
Tsol
1.66
250
Unit
V
V
V
A
A
Apk
W
°C
°C
mJ
K/W
°C
IFAG PMM RFS D HIR
1 of 8
March 2015
1 page  
Data Sheet BUY25CS12K-01
3 Typ. output characteristics
4 Typ. output characteristics
ID = f(VDS); Tj = 25 °C
parameter: VGS
ID = f(VDS); Tj = 150 °C
parameter: VG
5 Typ. drain-source on-state
resistance
RDS(on) = f(ID); Tj = 150 °C
parameter: VGS
6 Typ. drain-source on-state
resistance
RDS(on) = f(Tj)
ID=8A
IFAG PMM RFS D HIR
5 of 8
March 2015
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUY25CS12K-11.PDF ] | |
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