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PDF IDP30E65D2 Data sheet ( Hoja de datos )
| Número de pieza | IDP30E65D2 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDP30E65D2 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Diode
RapidSwitchingEmitterControlledDiode
IDP30E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
1 page  
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
IDP30E65D2
min.
Value
typ.
max. Unit
- 42 - ns
- 0.34 - µC
- 14.7 - A
- -2100 - A/µs
- 70 - ns
- 0.25 - µC
- 5.7 - A
- -700 - A/µs
Value
Unit
min. typ. max.
- 56 - ns
- 0.61 - µC
- 18.0 - A
- -2200 - A/µs
- 73 - ns
- 0.38 - µC
- 7.1 - A
- -900 - A/µs
5 Rev.2.1,2014-09-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IDP30E65D2.PDF ] | |
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