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Toshiba Semiconductor - VARIABLE CAPACITANCE DIODE (ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS)

Numéro de référence 1SV228
Description VARIABLE CAPACITANCE DIODE (ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1SV228 fiche technique
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV228
1SV228
Electronic Tuning Applications of FM Receivers
Low rs: rs = 0.3 (typ.)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
VR 15 V
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C3 V
C8 V
C3 V/C8 V
rs
IR = 10 μA
VR = 15 V
VR = 3 V, f = 1 MHz
VR = 8 V, f = 1 MHz
VR = 3 V, f = 100 MHz
15 ⎯ ⎯
⎯ ⎯ 10
(Note 1) 28.5 30.5 32.5
(Note 1) 11.7 12.7 13.7
(Note 1) 2.1 2.6
(Note 1) 0.3 0.5
V
nA
pF
pF
Ω
Note 1: Characteristics between anode 1 and anode 2
Marking
1 2007-11-01

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