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PDF IKW30N60TA Data sheet ( Hoja de datos )
| Número de pieza | IKW30N60TA | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IKW30N60TA
TrenchStop® Series
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter
Air – Con compressor
PTC heater
Motor drives
C
G
E
PG-TO247-3
Type
VCE
IKW30N60TA 600V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K30T60A
Package
PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014
1 page  
IKW30N60TA
TrenchStop® Series
q
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
100Hz
TC=80°C
TC=110°C
Ic
Ic
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 10)
100A
10A
tp=2µs
10µs
50µs
1A 1ms
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
160W
120W
80W
40W
50A
40A
30A
20A
10A
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
5
Rev. 2.3 17.09.2014
5 Page 
IKW30N60TA
TrenchStop® Series
q
TJ=175°C
20A
-600A/µs
TJ=25°C
15A
TJ=25°C
-450A/µs
TJ=175°C
10A
-300A/µs
5A -150A/µs
0A
700A/µs 800A/µs 900A/µs 1000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 30A,
Dynamic test circuit in Figure E)
0A/µs
700A/µs 800A/µs 900A/µs 1000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=30A,
Dynamic test circuit in Figure E)
70A
60A
50A
T =25°C
J
175°C
40A
30A
20A
10A
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2.0V
I =60A
F
1.5V
1.0V
30A
15A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
11
Rev. 2.3 17.09.2014
11 Page | ||
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| PDF Descargar | [ Datasheet IKW30N60TA.PDF ] | |
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