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PDF IKW75N60TA Data sheet ( Hoja de datos )
| Número de pieza | IKW75N60TA | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IKW75N60TA
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOPTM and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
G
E
PG-TO247-3
Type
IKW75N60TA
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K75T60A
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
Pulsed collector current, tp limited by Tjmax
TC = 25C
TC = 105C
Turn off safe operating area, VCE 600V, Tj 175C, tp 1µs
Diode forward current, limited by Tjmax
TC = 25C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
TC = 100C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10s)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
801)
75
225
225
801)
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) Value limited by bondwire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 14.07.2014
1 page  
IKW75N60TA
TRENCHSTOPTM Series
q
120A
VGE=20V
15V
90A 13V
11V
9V
60A
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
VGE=20V
90A
15V
13V
11V
60A
9V
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
1.5V
1.0V
I =150A
C
I =75A
C
I =37.5A
C
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.3 14.07.2014
5 Page 
IKW75N60TA
TRENCHSTOPTM Series
q
PG-TO247-3
Power Semiconductors
11
Rev. 2.3 14.07.2014
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IKW75N60TA.PDF ] | |
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